Infineon IPN95R3K7P7ATMA1: A High-Performance 950V CoolMOS™ P7 Power Transistor

In the realm of high-power applications, efficiency, reliability, and thermal performance are paramount. The Infineon IPN95R3K7P7ATMA1 stands out as a state-of-the-art solution, engineered to meet the rigorous demands of modern power systems. As part of Infineon’s renowned CoolMOS™ P7 series, this 950V superjunction MOSFET is specifically designed to deliver exceptional performance in applications such as switched-mode power supplies (SMPS), industrial power systems, and renewable energy inverters.

One of the most significant advantages of the IPN95R3K7P7ATMA1 is its ultra-low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. This characteristic is crucial in high-voltage environments, where reducing energy waste directly translates to improved system performance and lower operating costs. Additionally, the transistor exhibits excellent switching behavior, allowing for higher frequency operation without compromising reliability. This enables designers to create more compact and lightweight power solutions with reduced component sizes.

The robustness of the IPN95R3K7P7ATMA1 is further underscored by its advanced thermal management capabilities. The CoolMOS™ P7 technology ensures low thermal resistance, enabling the device to operate effectively even under high-stress conditions. This makes it particularly suitable for applications requiring continuous high-power delivery, such as server power supplies and electric vehicle charging infrastructure.

Moreover, the device incorporates enhanced avalanche ruggedness and longevity, providing increased durability against overvoltage transients and other unforeseen electrical stresses. This reliability is critical in ensuring system uptime and reducing maintenance requirements in industrial settings.

From a design perspective, the IPN95R3K7P7ATMA1 is housed in a TO-220 full-pack (FP) package, which offers superior isolation and mechanical stability. This package type is widely preferred for its ease of mounting and effective heat dissipation properties.

ICGOOODFIND:

The Infineon IPN95R3K7P7ATMA1 represents a cutting-edge power transistor solution that combines high voltage capability, superior efficiency, and exceptional thermal performance. It is an ideal choice for engineers seeking to optimize their high-power designs for reliability and energy savings.

Keywords:

High Voltage, Power Efficiency, Superjunction MOSFET, Thermal Performance, Switching Reliability