Infineon IPD110N12N3GATMA1: A Benchmark in 120V Power Switching Efficiency
The relentless pursuit of higher efficiency, power density, and reliability in power electronics design has led to significant advancements in MOSFET technology. At the forefront of this innovation is Infineon's OptiMOS™ 5 family, with the IPD110N12N3GATMA1 120V single N-channel power transistor standing out as a premier solution for demanding applications.
Engineered with a focus on ultra-low losses, this transistor sets a new standard for performance. Its cornerstone feature is an exceptionally low typical on-state resistance (RDS(on)) of just 1.1 mΩ. This minimal resistance is pivotal, as it directly translates to reduced conduction losses, allowing for more current to be handled with significantly less heat generation. This characteristic is paramount for improving the overall thermal performance and efficiency of systems, particularly in high-current scenarios.
Complementing its superior conduction characteristics is the device's outstanding switching performance. The OptiMOS™ 5 technology ensures very low gate charge (Qg) and figures of merit (FOM) that enable fast switching frequencies. This allows designers to shrink the size of magnetic components and filters, thereby increasing the power density of the final application. The resulting efficiency gains are critical for minimizing energy waste and are especially valuable in battery-operated and environmentally conscious designs.
The robustness of the IPD110N12N3GATMA1 is another key attribute. Its 120V drain-source voltage rating provides a comfortable margin for 48V bus systems, enhancing reliability and protection against voltage spikes. The device is also characterized by its high avalanche ruggedness and a body diode with excellent reverse recovery performance, contributing to system stability and longevity.
Housed in a TOLL (TO-leadless) package, this transistor offers a compact footprint and superior thermal resistance. The package's leadless design minimizes parasitic inductance, which is beneficial for high-frequency switching, and its exposed top surface allows for efficient cooling, further maximizing power handling capability.
Typical applications where this MOSFET excels include:
High-Current DC-DC Converters in server and telecom power supplies.
Motor Drive and Control Circuits for industrial automation and eMobility.
Synchronous Rectification in switch-mode power supplies (SMPS).
Battery Management Systems (BMS) and protection circuits.
ICGOODFIND: The Infineon IPD110N12N3GATMA1 exemplifies the pinnacle of power MOSFET design, offering a rare combination of ultra-low RDS(on), fast switching speed, and high robustness in a modern, thermally efficient package. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in their next-generation 120V designs.
Keywords: Ultra-Low RDS(on), High Efficiency, OptiMOS™ 5, TOLL Package, Power Density.
