Infineon IPB110N20N3LF 200V 11mΩ StrongIRFET™ Power MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and greater power density in modern power conversion systems continues to drive innovation in semiconductor technology. Addressing this need, the Infineon IPB110N20N3LF stands out as a high-performance Power MOSFET engineered to deliver exceptional efficiency and reliability in a wide range of applications.

Built on Infineon’s advanced StrongIRFET™ technology, this 200V N-channel MOSFET features an ultra-low on-state resistance (RDS(on)) of just 11mΩ. This remarkably low resistance is key to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Such characteristics make this device particularly suitable for high-current switching applications including server and telecom power supplies, industrial motor drives, solar inverters, and high-performance DC-DC converters.

The IPB110N20N3LF is housed in an TOLL (TO-leadless) package, which offers an excellent footprint and height profile compared to standard packages like D2PAK or TO-220. This packaging innovation not only enhances power density but also improves thermal performance due to its efficient cooling capabilities. The package is designed for automated assembly, supporting modern manufacturing processes while ensuring robust mechanical and electrical connection.

In addition to low RDS(on), this MOSFET provides fast switching performance, which helps in reducing switching losses—especially critical in high-frequency circuits. Combined with its high avalanche ruggedness and excellent body diode characteristics, the device ensures reliable operation under demanding conditions such as overloads or sudden voltage spikes.

Designers will also benefit from the component’s compatibility with high-frequency operation, enabling the development of smaller magnetics and filter components. This contributes to overall system miniaturization without compromising performance.

ICGOOODFIND

The Infineon IPB110N20N3LF StrongIRFET™ sets a high standard for power MOSFETs with its ultra-low RDS(on), superior thermal performance, and modern packaging—making it an ideal choice for next-generation high-efficiency power conversion systems.

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Keywords:

Power MOSFET, StrongIRFET, High-Efficiency, Low RDS(on), TOLL Package