PXE1110CDM-G003: Infineon's High-Performance CoolMOS™ Power Transistor for Advanced Switching Applications

In the rapidly evolving landscape of power electronics, efficiency, power density, and reliability are paramount. Addressing these critical demands, Infineon Technologies introduces the PXE1110CDM-G003, a state-of-the-art CoolMOS™ power transistor engineered specifically for advanced switching applications. This device stands as a testament to Infineon's leadership in semiconductor innovation, offering system designers a superior component to push the boundaries of performance in power supplies, industrial drives, and renewable energy systems.

Built upon Infineon's revolutionary Super Junction (SJ) technology, the PXE1110CDM-G003 achieves an exceptional balance between low on-state resistance (RDS(on)) and low gate charge (Qg). This pivotal combination is the key to minimizing both conduction and switching losses, which directly translates to higher overall system efficiency and reduced heat generation. The ability to operate at higher switching frequencies allows for the use of smaller passive components like inductors and capacitors, enabling a significant increase in power density and a reduction in the overall size and weight of the end product.

The PXE1110CDM-G003 is designed to withstand the rigorous demands of modern electronic systems. It features a robust and durable design that ensures outstanding performance under tough conditions. Its high avalanche ruggedness and exceptional thermal cycling capability make it an ideal choice for applications that require long-term reliability and stability. Furthermore, the component is optimized for ease of use in design, facilitating faster time-to-market for products ranging from server and telecom power supplies to charging infrastructure for electric vehicles.

A critical advantage of this CoolMOS™ device is its enhanced body diode, which provides improved reverse recovery characteristics. This is particularly beneficial in bridge topology circuits, such as power factor correction (PFC) stages and full-bridge converters, where it contributes to lower electromagnetic interference (EMI) and smoother switching behavior. By ensuring cleaner and more efficient switching, the PXE1110CDM-G003 helps designers meet stringent global energy efficiency standards like 80 PLUS and ErP Lot 7.

ICGOOODFIND: The Infineon PXE1110CDM-G003 CoolMOS™ power transistor is a high-performance semiconductor solution that sets a new benchmark for efficiency and power density in advanced switching applications. Its superior technological attributes make it an indispensable component for engineers striving to create next-generation, energy-efficient power systems.

Keywords: CoolMOS™, Super Junction Technology, Switching Losses, Power Density, System Efficiency.