High-Performance 1EDB7275F Single-Channel EiceDRIVER from Infineon for Advanced Power Systems

Release date:2025-10-29 Number of clicks:144

High-Performance 1EDB7275F Single-Channel EiceDRIVER from Infineon for Advanced Power Systems

The relentless pursuit of efficiency, power density, and reliability in modern power electronics demands gate driver ICs that deliver uncompromising performance. Infineon Technologies addresses this challenge with the 1EDB7275F, a state-of-the-art single-channel EiceDRIVER™ designed to set new benchmarks in advanced power systems, including server and telecom SMPS, industrial motor drives, and renewable energy applications.

Engineered for robustness, the 1EDB7275F is built upon Infineon's proprietary and highly reliable coreless transformer (CT) technology. This innovative isolation technique enables superior performance compared to traditional optocoupler-based or magnetic coupling solutions. It facilitates high common-mode transient immunity (CMTI) of over 200 V/ns, ensuring stable operation and preventing malfunctions in the presence of extremely fast-switching noise, a critical requirement for silicon carbide (SiC) and gallium nitride (GaN) MOSFETs.

The driver offers a source/sink current capability of 5 A / 8 A, providing the robust gate drive necessary for fast switching transitions of high-power transistors. This strong drive current minimizes switching losses, which is paramount for achieving high system efficiency. The device features a wide supply voltage range (up to 28 V) and integrated active Miller clamping. This clamping function effectively prevents parasitic turn-on of the power switch during fast switching events, enhancing system safety and reliability without the need for external components.

Furthermore, the 1EDB7275F incorporates comprehensive protection features. It includes undervoltage lockout (UVLO) protection for both the primary and secondary sides, safeguarding the power switch from operating in an inefficient or dangerous state. The product also boasts a high operating junction temperature of up to 125 °C, making it suitable for demanding environments. Its compact DSO-8 package offers excellent creepage and clearance distances, fulfilling stringent safety standards.

In summary, the 1EDB7275F EiceDRIVER™ from Infineon represents a pinnacle of gate driver design, combining high noise immunity, strong drive strength, and integrated protection to unlock the full potential of next-generation power semiconductors.

ICGOODFIND: The Infineon 1EDB7275F is a top-tier solution for engineers designing high-performance, high-reliability power systems, particularly those leveraging wide-bandgap semiconductors like SiC and GaN.

Keywords: Gate Driver IC, Coreless Transformer Technology, High CMTI, Active Miller Clamping, Wide-Bandgap Semiconductors.

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