Infineon IPB044N15N5: High-Performance 15 mΩ OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPB044N15N5 stands as a prime example of advanced power semiconductor technology, delivering exceptional performance in a compact package. As part of Infineon’s renowned OptiMOS™ 5 family, this N-channel power MOSFET is engineered to meet the rigorous demands of modern applications, including automotive systems, industrial motor drives, and high-density switched-mode power supplies (SMPS).

At the heart of the IPB044N15N5 is its ultra-low on-state resistance (RDS(on)) of just 1.5 mΩ at 10 V. This remarkably low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Even at lower gate drive voltages, such as 4.5 V, the device maintains an impressively low RDS(on) of 2.0 mΩ, making it suitable for applications where lower gate drive levels are common. This feature is particularly beneficial in improving overall system efficiency and enabling operation in challenging thermal environments.

The MOSFET is rated for 100 V drain-source voltage (VDS), providing ample headroom for high-voltage applications while ensuring robust operation. Its high current handling capability, with a continuous drain current (ID) of 380 A at 25°C, allows it to manage significant power levels. This makes the IPB044N15N5 ideal for high-current switching tasks, such as in DC-DC converters, inverters, and battery management systems.

Another standout feature is its optimized switching performance. The OptiMOS™ 5 technology reduces gate charge (Qg) and output capacitance (Coss), resulting in faster switching transitions and lower switching losses. This is critical for high-frequency operations, where efficiency can be compromised by excessive dynamic losses. The improved figure of merit (FOM) ensures that the device operates efficiently even at elevated switching frequencies, contributing to smaller and more efficient power designs.

Thermal management is enhanced through low thermal resistance and a package designed for effective heat dissipation. The IPB044N15N5 is housed in an Infineon’s proprietary TO-Leadless (TOLL) package, which offers an excellent power-to-size ratio. The package’s bottom-side cooling capability allows for direct thermal connection to the PCB, improving heat transfer and enabling higher power density designs.

In addition, the device boasts high robustness and reliability, with qualifications meeting automotive standards. This makes it a preferred choice for automotive applications, including electric vehicle (EV) powertrains, auxiliary systems, and battery protection circuits. Its strong immunity to avalanche and short-circuit events further ensures long-term durability in demanding conditions.

ICGOOODFIND: The Infineon IPB044N15N5 OptiMOS™ 5 Power MOSFET sets a high benchmark with its ultra-low RDS(on), excellent switching characteristics, and superior thermal performance. It is an optimal solution for applications requiring high efficiency, power density, and reliability.

Keywords:

OptiMOS™ 5, Low RDS(on), High Efficiency, Power MOSFET, Thermal Performance