Infineon MDP16R: A High-Performance 16 mΩ MOSFET for Demanding Power Conversion Applications
In the relentless pursuit of higher efficiency and power density in modern electronics, the MOSFET stands as a critical enabler. Addressing this need, Infineon Technologies has introduced the MDP16R, a benchmark power MOSFET that sets a new standard with its ultra-low 16 mΩ maximum on-state resistance (RDS(on)). This device is engineered specifically to meet the rigorous demands of advanced power conversion systems.
The cornerstone of the MDP16R's performance is its exceptionally low RDS(on). This key parameter directly translates to minimized conduction losses, which is the primary source of power loss in many applications. When a MOSFET is in its on-state, a lower resistance means less energy is wasted as heat. For systems operating at high currents, even a reduction of a few milliohms can yield substantial improvements in overall efficiency, thermal management, and reliability. The MDP16R excels in this regard, making it an ideal choice for high-current paths.
Beyond its low resistance, the MDP16R is optimized for fast switching performance. Utilizing Infineon's advanced OptiMOS™ technology, the device features low gate charge (Qg) and excellent figure-of-merit (FOM). This allows for higher switching frequencies in topologies like synchronous buck converters, totem-pole PFC, and motor drives. Operating at higher frequencies enables designers to use smaller passive components, such as inductors and capacitors, thereby significantly increasing the power density of the final design. This is a crucial advantage for space-constrained applications like server power supplies, telecommunications infrastructure, and automotive systems.
Thermal management is another area where the MDP16R proves its merit. The low thermal resistance of its package ensures that heat generated during operation is effectively transferred away from the silicon die to the PCB and heatsink. This robust thermal capability allows the MOSFET to handle high power levels continuously without derating, ensuring long-term stability and durability in harsh operating environments.
Furthermore, the device offers enhanced body diode robustness, which is vital for applications involving hard commutation or reverse recovery, such as in bridge circuits. This characteristic improves the system's resilience against voltage spikes and other transient events.
ICGOOODFIND: The Infineon MDP16R is a superior MOSFET that delivers a powerful combination of ultra-low 16 mΩ RDS(on), fast switching speed, and excellent thermal performance. It is a pivotal component for engineers aiming to push the boundaries of efficiency and power density in demanding power conversion applications, from data centers to electric vehicles.
Keywords: Power MOSFET, Low RDS(on), High Efficiency, Power Density, Thermal Performance.
